PART |
Description |
Maker |
AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
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Alliance Semiconductor
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ST14E32F |
Serial Access Extended Addressing Compatible with IIC Bus 32K (4K x 8) EEPROM(串行存取,兼容IIC地址扩展总线2K EEPROM)
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意法半导
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M9306-RMN6T M93C86-BN3G M93C86-BN3P M93C86-BN3TG M |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE? serial access EEPROM 16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE庐 serial access EEPROM 16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM 16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
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STMicroelectronics
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CAT33C704P-TE13 |
4K-bit secure access serial EEPROM
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Catalyst Semiconductor
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PCA24S08 PCA24S08D PCA24S08DP |
1024 ?8-bit CMOS EEPROM with access protection 1024 ?8-bit CMOS EEPROM with access protection
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NXP Semiconductors Philips Semiconductors
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AT24RF08 |
1K x 8 Dual Access EEPROM with RFID and Serial Interfaces
|
ATMEL[ATMEL Corporation]
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IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB
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IRF[International Rectifier] International Rectifier, Corp.
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STM8S105S4U3 STM8S105S4U3CTR STM8S105S4U3TR STM8S1 |
Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I虏C Access line, 16 MHz STM8S 8-bit MCU, up to 32 Kbytes Flash, integrated EEPROM,10-bit ADC, timers, UART, SPI, I2C
|
STMicroelectronics http://
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STM32L051K6 STM32L051T6 STM32L051T8 STM32L051C6 |
Access line ultra-low-power 32-bit MCU ARM-based Cortex-M0 , up to 64 KB Flash, 8 KB SRAM, 2 KB EEPROM, ADC
|
STMicroelectronics
|
BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS EEPROM (4kx8) 32K 2.5-6.0 EEPROM (4kx8) 32K 1.8-6.0 EEPROM (1024x8) 8K EEPROM 256K X 8 200ns EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C EEPROM (256x8) 2K 1.8-6.0 EEPROM (512x8) 4k 1.8-6.0 EEPROM 128K X 8 150ns EEPROM (8kx8) 64K 1.8-6.0 EEPROM (2048x8)(1024x16)16K EEPROM U 804-29EE0107CWH EEPROM 64K X 8 70ns EEPROM (256x8) 2K 2.5-6.0 EEPROM (8kx8) 64K 2.5-6.0 SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP EEPROM (384x8) 128k 16 EEPROM SPI 1KBIT EEPROM SPI 4096X8 BIT EEPROM SRL 64X16 BIT EEPROM (256x8) (128x16) 2K 8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC EEPROM (128x8) 1k 2.5-6.0 EEPROM (8kx8) 64K 5V 90ns EEPROM (32kx8) 256K 5V 150 EEPROM (32kx8) 256K 5V 120 EEPROM 2kb 1.7-5.5V Ind I2C EEPROM 512K-Bit CMOS PARA EEPROM EEPROM (32kx8) 256K 3V 250 EEPROM 64K X 8 512K 5V 150 EEPROM 256K (32KX8)
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Omron Electronics, LLC Atmel, Corp. MITSUMI ELECTRIC CO., LTD. Intersil, Corp. Cypress Semiconductor, Corp. TE Connectivity, Ltd. Silicon Storage Technology, Inc. BCD Semiconductor Manufacturing, Ltd. Belden, Inc. Rohm Co., Ltd. Bourns, Inc. NXP Semiconductors N.V. Lattice Semiconductor, Corp. Rectron Semiconductor SIEMENS AG Maxim Integrated Products, Inc. Rochester Electronics, LLC RF Solutions, Ltd. Fujitsu, Ltd.
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
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Turbo IC
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BR24L64FJ-WE2 BR24L02FVM-WTR BR24L04NUX-WTR BR24L0 |
I2C BUS 64Kbit(8192x8bit) EEPROM I2C BUS 2Kbit(256x8bit) EEPROM I2C BUS 4Kbit(512x8bit) EEPROM I2C BUS 1Kbit(128x8bit) EEPROM I2C BUS 8Kbit(1024x8bit) EEPROM I2C BUS 16Kbit(2048x8bit) EEPROM I2C BUS 32Kbit(4096x8bit) EEPROM
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ROHM
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